Formation of various-axes-oriented wurtzite nuclei and enlargement of the a-axis-oriented region in AlFeN films deposited on Si(100) substrates
Formation of various-axes-oriented wurtzite nuclei and enlargement of the a-axis-oriented region in AlFeN films deposited on Si(100) substrates
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Si(100) 衬底上沉积的 AlFeN 薄膜中多轴取向纤锌矿核的形成和 a 轴取向区域的扩大
DOI:
10.1039/d0ma01026j
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发表时间:
2021
影响因子:
5
通讯作者:
Tamenori Yusuke
中科院分区:
文献类型:
--
作者:
Imada Saki;Isshiki Toshiyuki;Tatemizo Nobuyuki;Nishio Koji;Mamishin Shuichi;Suzuki Yuya;Ito Katsuji;Nitta Kiyofumi;Sekizawa Oki;Suga Hiroki;Tamenori Yusuke
Wurtzite AlN films with high Fe concentrations were deposited on Si(100) substrates using radio-frequency sputtering, and the growth process was investigated. X-Ray diffraction (XRD) analysis with parallel incident X-rays showed that a thick film (∼2.5 μm) had a non-polar a-axis orientation, similar to the films deposited on SiO2 glass substrates. Through powder XRD analysis, it was found that non-wurtzite fine crystals and/or amorphous materials formed during the initial stage of deposition, followed by wurtzite nucleation with various orientations of the axes, such as a, m, and r orientations. The XRD results also implied that the a-axis-oriented regions drastically increased with increasing film thickness. Scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy analyses suggested that one of the candidates for the non-wurtzite fine crystalline material was γ-Al2O3. STEM analysis also demonstrated that a-axis-oriented single-crystal grains grew from randomly oriented small wurtzite grains that increased in diameter with increasing deposition time. Al K-edge X-ray absorption near-edge structure results suggested that the electronic structure in the polar c-axis direction of wurtzite lying in the film plane developed with deposition time, thereby further supporting the findings of the XRD and STEM analyses.