Improvement of the open circuit voltage by modifying the transparent indium–tin oxide front electrode in amorphous n–i–p solar cells
Improvement of the open circuit voltage by modifying the transparent indium–tin oxide front electrode in amorphous n–i–p solar cells
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DOI：
10.1002/pip.1220
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发表时间：
2012-09
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通讯作者：
F. Haug;R. Biron;G. Kratzer;F. Leresche;J. Besuchet;C. Ballif;M. Dissel;S. Kretschmer;W. Soppe;P. Lippens;K. Leitner
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作者：
F. Haug;R. Biron;G. Kratzer;F. Leresche;J. Besuchet;C. Ballif;M. Dissel;S. Kretschmer;W. Soppe;P. Lippens;K. Leitner
在薄膜硅太阳能电池的前接触处，p掺杂窗口层和n型透明电极之间的结形成了电荷载流子必须克服的屏障。屏障高度由这两种材料的功函数差决定。对于不同组成的In2O3-SnO2 （ITO）体系，我们发现溅射沉积过程中较高的氧分压增加了沉积膜的功函数。在相同的氧分压范围内，将低锡含量的ITO电极应用于n-i-p型薄膜硅太阳能电池，VOC增益可达40 mV。版权所有©2011 John Wiley & Sons， Ltd
At the front contact of thin film silicon solar cells, the junction between the p‐doped window layer and the n‐type transparent electrode results in a barrier that must be surmounted by the charge carriers. The barrier height is governed by the work‐function difference of these two materials. For different compositions of the well known In2O3–SnO2 (ITO) system, we find that higher oxygen partial pressure during sputter deposition increases the work function of the deposited films. Over the same range of oxygen partial pressures, ITO electrodes with low tin content applied to n–i–p type thin film silicon solar yield a gain in VOC by up to 40 mV. Copyright © 2011 John Wiley & Sons, Ltd.