Interaction of hydrogen atoms with Si(111) surfaces: Adsorption, abstraction, and etching
Interaction of hydrogen atoms with Si(111) surfaces: Adsorption, abstraction, and etching
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氢原子与 Si(111) 表面的相互作用：吸附、提取和蚀刻
DOI：
10.1063/1.1351158
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发表时间：
2001
影响因子：
4.4
通讯作者：
J. Küppers
中科院分区：
文献类型：
--
作者：
A. Dinger;C. Lutterloh;J. Küppers
利用热脱附和产物检测技术研究了H原子与Si（111）表面的吸附、抽离和刻蚀作用。本研究覆盖范围广，温度范围为100-1000 K。在100 K下氢气进入Si（111）后，在氢气中分别在455、700和820 K附近观察到三氢化物（t）、二氢化物（d）和一氢化物（m）的脱附谱分解。H在380 K下的吸附导致从d和m的解吸，并且在680 K下的H进入后观察到从m的解吸。m、d和t的解吸动力学符合一级动力学，只有m峰在小覆盖率下表现出二级动力学。在热脱附谱中，400 K以上的氢暴露导致920 K时次表面α-氢的脱附。在630 K左右监测通过硅烷形成的非静态蚀刻。在100-500 K的温度范围内，非稳态硅烷刻蚀峰通过准一级过程发生。
The interaction of H atoms with Si(111) surfaces with respect to adsorption, abstraction, and etching was investigated using thermal desorption and product detection techniques. The study covers a wide range of coverages and the temperature range 100–1000 K. After H admission to Si(111) at 100 K in H2 desorption spectra decomposition of trihydride (t), dihydride (d), and monohydride (m) was observed around 455, 700, and 820 K, respectively. Adsorption of H at 380 K leads to desorption from d and m, and after admission of H at 680 K desorption from m was observed. The kinetics of m, d, and t desorption is according to first-order kinetics, only the m peak exhibits at small coverages second-order phenomenology. H exposure above 400 K leads to desorption of subsurface α-hydrogen at 920 K in thermal desorption spectra. Nonstationary etching via silane formation was monitored around 630 K. The nonstationary silane etch peak occurs through a quasi-first-order process in the admission temperature range 100–500 K...