Light emission and photoluminescence from high-k dielectrics containing Ge nanocrystals
Light emission and photoluminescence from high-k dielectrics containing Ge nanocrystals
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DOI：
10.1116/1.3025844
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发表时间：
2009-01-01
影响因子：
1.4
通讯作者：
Liao, Shu-Hui
中科院分区：
文献类型：
--
作者：
Chang, Shu-Tong;Liao, Shu-Hui
在HfAlO中嵌入Ge纳米晶的金属/HfAlO/Si发光二极管具有可见光发射(610 Nm)和红外发射(760 Nm)。用透射电子显微镜和拉曼光谱对样品的形貌和Ge含量进行了测量。包埋在HfAlO中的Ge纳米晶的光致发光峰值位于700 nm，而包埋在HfO(2)中的Ge纳米晶的光致发光峰值位于725 nm。这可能是由于HfAlO的带隙比HfO(2)的带隙大。(C)2009年美国真空协会。[DOI：10.1116/1.3025844]
A metal/HfAlO/Si light emitting diode with Ge nanocrystals embedded in HfAlO has the visible light emission (610 nm) and the infrared emission (760 nm). The image and Ge content are measured by the transmission electron microscopy and Raman spectroscopy. The photoluminescence of Ge nanocrystals embedded in HfAlO has a peak wavelength at 700 nm, while the peak wavelength at 725 nm is observed for Ge nanocrystals embedded in HfO(2). The difference of it may be due to the larger band gap of HfAlO as compared to HfO(2). (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3025844]