InAlN/(In)GaN high electron mobility transistors:: some aspects of the quantum well heterostructure proposal
InAlN/(In)GaN high electron mobility transistors:: some aspects of the quantum well heterostructure proposal
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DOI：
10.1088/0268-1242/17/6/307
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发表时间：
2002-06-01
影响因子：
1.9
通讯作者：
Kuzmík, J
中科院分区：
文献类型：
--
作者：
Kuzmík, J
建议用不同摩尔分数的InAIN取代AlGaN/GaN高电子迁移率晶体管的AlGaN势垒层。用解析公式描述了InAlN/(in)GaN量子阱的内部极化场。考虑最大可接受应变，计算了不同In摩尔分数下的InAlN/(In)GaN HEMTs量子阱自由电子密度、晶体管开路漏极电流和阈值电压。建议对于15nm厚的InxAl1-xN势垒，0.08小于等于x小于等于0.27或0小于等于y小于等于0。18对于5-10 nm厚的InyGa1-yN通道可以应用于应变而没有层弛豫，同时量子阱自由电子密度高达4.6 x 10(17) m（-2）和晶体管开路漏极电流高达4.5 a mm（-1）可以预期。
The replacement of the AlGaN barrier layer of the AlGaN/GaN high electron mobility transistors (HEMTs) with InAIN of various In molar fractions is suggested. Internal polarization fields in the InAlN/(In)GaN quantum well are described using analytical formulae. InAlN/(In)GaN HEMTs quantum well free electron densities, transistor open channel drain currents and threshold voltages are calculated for different In molar fractions considering the maximal acceptable strain. It is suggested that 0.08 less than or equal to x less than or equal to 0.27 for a 15 nm thick InxAl1-xN barrier or 0 less than or equal to y less than or equal to 0. 18 for a 5-10 nm thick InyGa1-yN channel can be applied for strain without layer relaxation while the quantum well free electron densities up to 4.6 x 10(17) m(-2) and the transistor open channel drain currents up to 4.5 A mm(-1) can be expected.