Monolayer optical memory cells based on artificial trap-mediated charge storage and release.
Monolayer optical memory cells based on artificial trap-mediated charge storage and release.
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DOI：
10.1038/ncomms14734
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发表时间：
2017-03-24
影响因子：
16.6
通讯作者：
Kim JM
中科院分区：
文献类型：
--
作者：
Lee J;Pak S;Lee YW;Cho Y;Hong J;Giraud P;Shin HS;Morris SM;Sohn JI;Cha S;Kim JM
单层过渡金属二硫属化合物由于其直接带隙和强的光-物质相互作用而被认为是柔性和透明光电子应用的有希望的候选者。虽然已经展示了几种基于单层的光电探测器，但适用于高质量图像感测的单层光学存储器件很少受到关注。在这里，我们报告了单层MoS 2光电子存储器件的概念，该器件通过单层/电介质界面的功能化，使用人工结构的电荷陷阱层，从而产生局部电子态，作为电致电荷陷阱和光学介导的基础电荷释放。我们的器件表现出出色的光响应存储特性，具有高达4,700 dB（73.4 dB）的大线性动态范围、低关态电流（<4 pA）和超过104 s的长存储寿命。此外，多层次的检测多达8个光学状态被成功地证明。这些结果代表了未来单层光电存储器件的发展迈出了重要的一步。存储器装置是图像感测电路的关键构建块。在这里，作者展示了一种基于电荷捕获和随后的光诱导电荷释放的二硫化钼单层光电存储器件，能够进行12位操作。
Monolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices. Memory devices are key building blocks of image sensing circuitry. Here, the authors demonstrate a MoS2 monolayer optoelectronic memory device based on charge trapping and subsequent optically-induced charge release, capable of 12-bit operation.