Quantum phase transition in one-dimensional arrays of resistively shunted small Josephson junctions.

Quantum phase transition in one-dimensional arrays of resistively shunted small Josephson junctions.
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电阻分流小约瑟夫森结一维阵列中的量子相变。

DOI:
10.1103/physrevlett.89.197001
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发表时间:
2002
影响因子:
8.6
通讯作者:
Y. Ootuka
Y. Ootuka
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
H. Miyazaki;Y. Takahide;A. Kanda;Y. Ootuka

文献摘要

被引文献

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通过改变并联在每个结上的普通金属电阻的电阻R(S)和约瑟夫森耦合能量E(J)与充电能量E(C)的比值,我们观察到了一维(1D)小约瑟夫森结阵列中的超导体-绝缘体转变。当E(J)/E(C)小于1时,相界位于R(S)处,约为R(Q)(R(Q)等于h/4 e(2)=6.45 k Ω)。我们讨论了所获得的相图的耗散驱动的量子相变的理论模型,特别注意从2D阵列的差异。
We have observed a superconductor-insulator transition in one-dimensional (1D) arrays of small Josephson junctions by changing both the resistance R(S) of normal metal resistors shunting each junction and the ratio of the Josephson coupling energy E(J) to the charging energy E(C). The phase boundary lies at R(S) approximately R(Q) (R(Q) identical with h/4e(2)=6.45 kOmega) when E(J)/E(C) is smaller than about unity. We discuss the obtained phase diagram in terms of theoretical models of the dissipation-driven quantum phase transition, with particular attention to differences from 2D arrays.