Analysis and Design of a CMOS UWB LNA With Dual-RLC-Branch Wideband Input Matching Network
Analysis and Design of a CMOS UWB LNA With Dual-RLC-Branch Wideband Input Matching Network
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DOI：
10.1109/tmtt.2009.2037863
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发表时间：
2010-02-01
影响因子：
4.3
通讯作者：
Lu, Shey-Shi
中科院分区：
文献类型：
--
作者：
Lin, Yo-Sheng;Chen, Chang-Zhi;Lu, Shey-Shi
提出了一种基于电流复用级联结构的宽带低噪声放大器。该方法利用电阻并联反馈和并联LC负载的优点，将输入网络等效为两个并联支路，二阶宽带带通滤波器。此外，电感串联和并联峰化技术都用于带宽扩展。理论分析表明，输入匹配的频率响应和噪声系数（NF）都可以用以品质因数为参数的二阶函数来描述。CMOS超宽带LNA功耗为10.34 mW，在3.1-10.6 GHz目标频段内，S-11低于-8.6 dB，S-22低于-10 dB，S-12低于-26 dB，平坦S-21为12.26 +/- 0.63 dB，平坦NF为4.24 +/- 0.5 dB。此外，还实现了良好的相位线性特性（在整个频带上群延迟变化仅为+/-22ps）。分析、模拟和实测结果吻合较好。
A wideband low-noise amplifier (LNA) based on the current-reused cascade configuration is proposed. The wideband input-impedance matching was achieved by taking advantage of the resistive shunt-shunt feedback in conjunction with a parallel LC load to make the input network equivalent to two parallel-branches, i.e., a second-order wideband bandpass filter. Besides, both the inductive series- and shunt-peaking techniques are used for bandwidth extension. Theoretical analysis shows that both the frequency response of input matching and noise figure (NF) can be described by second-order functions with quality factors as parameters. The CMOS ultra-wideband LNA dissipates 10.34-mW power and achieves S-11 below -8.6 dB, S-22 below -10 dB, S-12 below -26 dB, flat S-21 of 12.26 +/- 0.63 dB, and flat NF of 4.24 +/- 0.5 dB over the 3.1-10.6-GHz band of interest. Besides, good phase linearity property (group-delay variation is only +/- 22 ps across the whole band) is also achieved. The analytical, simulated, and measured results agree well with one another.