Injection and Population Inversion in Electrically Induced p–n Junction in Graphene with Split Gates
Injection and Population Inversion in Electrically Induced p–n Junction in Graphene with Split Gates
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DOI：
10.1143/jjap.46.l151
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发表时间：
2007-02
影响因子：
1.5
通讯作者：
M. Ryzhii;V. Ryzhii
中科院分区：
文献类型：
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作者：
M. Ryzhii;V. Ryzhii
我们研究了在分裂栅石墨烯异质结中电诱导的正向偏置p-n结中的电子和空穴注入过程，并计算了在粒子数反转条件下与带间和带内跃迁相关的交流电导率。结果表明，净电导率在太赫兹频率范围内可以是负的，使得石墨烯异质结构中的电诱导p-n结可以用于相干太赫兹辐射源。
We study electron and hole injection processes in a forward biased p–n junction electrically induced in a graphene heterostructure with split gates and calculate the ac conductivity associated with the interband and intraband transitions under the conditions of population inversion. It is shown that the net conductivity can be negative in the terahertz range of frequencies, so that the electrically induced p–n junctions in graphene heterostuctures might be used in sources of coherent terahertz radiation.