Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates
Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates
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DOI：
10.1117/12.2544811
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发表时间：
2020-02
期刊：
影响因子：
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通讯作者：
Q. Lu;Yi Zhou;Jianxin Chen;Li He;A. Krier
中科院分区：
文献类型：
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作者：
Q. Lu;Yi Zhou;Jianxin Chen;Li He;A. Krier
在这项工作中，我们报道了基于InAs/GaAsSb超晶格的带间级联发光二极管（ICLED），该结构由InAs/GaAsSb超晶格发射体、InAs/AlAsSb多量子阱（MQW）注入区和GaAsSb/AlAsSb MQW隧穿区组成。制备了5级和2级icled。该器件具有高输出功率、低串联电阻和高壁插效率（WPE）的特点。在室温下，5级和2级icled的辐射率分别为0.36 W/cm2 sr和0.19 W/cm2 sr。在80k时，5级ICLED的输出功率达到3.56 mW，注入电流为350 mA， WPE约为0.5%。随着注入量的增加，效率基本保持不变。这些icled从20 K到300 K的热猝灭也明显小于在类似波长下发射的其他类型的器件。这些结果表明，icled在需要大输出功率和高壁插效率的中红外发光二极管应用中具有巨大的潜力。
In this work, we report interband cascade light emitting diodes (ICLEDs) based on InAs/GaAsSb superlattices emitting around 4.5 μm The ICLED structures were grown on InAs substrates by molecular beam epitaxy, which were composed of InAs/GaAsSb superlattice emitters, InAs/AlAsSb multi-quantum well (MQW) injection regions, and the GaAsSb/AlAsSb MQW tunneling regions. Both 5-stage and 2-stage ICLEDs were fabricated. The devices exhibited high output power, low series resistance and high wall-plug efficiency (WPE). At room temperature, radiances of 0.36 W/cm2 sr and 0.19 W/cm2 sr were achieved from the 5-stage and 2-stage ICLEDs respectively. At 80 K, the output power from the 5-stage ICLED reached 3.56 mW with 350 mA injection current, resulting in a WPE of around 0.5%. The efficiency was largely maintained with increasing injection. The thermal quenching of these ICLEDs from 20 K to 300 K was also significantly less than other types of devices emitting at similar wavelengths. These results demonstrate that ICLEDs have great potential for mid-infrared light emitting diode applications requiring large output power and high wall-plug efficiency.