Scanning Ion Conductance Microscopy of Nafion-Modified Nanopores

Scanning Ion Conductance Microscopy of Nafion-Modified Nanopores
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Nafion 修饰纳米孔的扫描离子电导显微镜

DOI:
10.1149/1945-7111/acdd29
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发表时间:
2023
影响因子:
3.9
通讯作者:
Baker, Lane A.
Baker, Lane A.
中科院分区:
工程技术4区
文献类型:
--
作者:
Alanis, Kristen;Siwy, Zuzanna S.;Baker, Lane A.

文献摘要

相似文献

氮化硅膜的单纳米孔被Nafion不对称修饰,并通过扫描离子电导显微镜进行了研究,其中Nafion改变了纳米孔的局部离子浓度。应用跨膜电位对局部离子浓度的影响进行了研究,Nafion薄膜提供了靠近纳米孔的阳离子储存库。在纳米孔的电流-电压响应和纳米孔附近SICM纳米吸管的接近曲线中观察到基于离子浓度极化的流体二极管。实验结果得到了有限元模拟的支持,该模拟详细描述了纳米孔/Nafion/纳米吸管环境中的离子耗尽和富集。
Single nanopores in silicon nitride membranes are asymmetrically modified with Nafion and investigated with scanning ion conductance microscopy, where Nafion alters local ion concentrations at the nanopore. Effects of applied transmembrane potentials on local ion concentrations are examined, with the Nafion film providing a reservoir of cations in close proximity to the nanopore. Fluidic diodes based on ion concentration polarization are observed in the current-voltage response of the nanopore and in approach curves of SICM nanopipette in the vicinity of the nanopore. Experimental results are supported with finite element method simulations that detail ion depletion and enrichment of the nanopore/Nafion/nanopipette environment.