Mobility and saturation velocity in graphene on SiO2
Mobility and saturation velocity in graphene on SiO2
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DOI：
10.1063/1.3483130
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发表时间：
2010-08-23
影响因子：
4
通讯作者：
Pop, Eric
中科院分区：
文献类型：
--
作者：
Dorgan, Vincent E.;Bae, Myung-Ho;Pop, Eric
我们研究了室温以上（300-500 K）和高场（类似于1 V/ μ m）下SiO2上石墨烯的迁移率和饱和速度。数据分析与实际模型，包括门控载流子，热产生，“水坑”电荷，焦耳加热。迁移率和饱和速度在300 K以上随温度升高而降低，在2 × 10(12) cm（-2）以上随载流子密度升高而降低。在低载流子密度下，饱和速度为bbb3x10 (7) cm/s，并且仍然大于Si，高达1.2x10(13) cm（-2）。传输似乎主要受到SiO2衬底的限制，但结果表明石墨烯的固有饱和速度可能是这里观察到的两倍以上。(C) 2010年美国物理研究所。(doi: 10.1063/1.3483130)
We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (similar to 1 V/mu m). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10(12) cm(-2). Saturation velocity is >3x10(7) cm/s at low carrier density, and remains greater than in Si up to 1.2x10(13) cm(-2). Transport appears primarily limited by the SiO2 substrate but results suggest intrinsic graphene saturation velocity could be more than twice that observed here. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3483130]