Saturation induced by picosecond pulses in semiconductor optical amplifiers
Saturation induced by picosecond pulses in semiconductor optical amplifiers
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DOI：
10.1364/josab.14.000761
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发表时间：
1997-04
影响因子：
1.9
通讯作者：
A. Mecozzi;J. Mørk
中科院分区：
文献类型：
--
作者：
A. Mecozzi;J. Mørk
我们研究了半导体光放大器中皮秒脉冲的放大，包括载流子加热和光谱烧孔的影响。在简化近似下，我们得到了给定皮秒脉冲输入时放大器输出的解析表达式。对于低于临界脉冲宽度的脉冲来说，带内动力学的影响变得重要，该临界脉冲宽度与表征半导体激光器的调制特性的K因子有关。在大多数情况下，临界脉冲宽度的范围从几皮秒到20ps。
We study the amplification of picosecond pulses in a semiconductor optical amplifier, including the effect of carrier heating and spectral-hole burning. Under simplifying approximations we obtain an analytical expression for the amplifier output to a given picosecond pulse input. The effect of the intraband dynamics becomes important for pulses below a critical pulse width that is related to the K factor that characterizes the modulation properties of semiconductor lasers. The critical pulse width ranges from a few picoseconds to 20 ps in most cases.