Printed shadow masks for organic transistors
Printed shadow masks for organic transistors
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DOI：
10.1063/1.2790495
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发表时间：
2007-09-24
影响因子：
4
通讯作者：
Someya, Takao
中科院分区：
文献类型：
--
作者：
Noguchi, Yoshiaki;Sekitani, Tsuyoshi;Someya, Takao
我们已经通过使用由丝网印刷系统图案化的荫罩制造了有机场效应晶体管。50 nm厚的并五苯层在真空系统中升华为通道，穿过具有通过喷墨图案化的多层的基膜上的荫罩。在沉积并五苯层之后，将荫罩从基膜剥离，而不会对下部结构造成任何机械损伤。饱和区的迁移率为0.4cm（2）/Vs，开关比超过10（5）。(C)2007年，美国物理学会。
We have manufactured organic field-effect transistors by using shadow masks that are patterned by a screen printing system. The 50-nm-thick pentacene layer is sublimed as a channel in the vacuum system through the shadow mask on the base film with a multilayer patterned by ink-jet. After the deposition of the pentacene layer, the shadow mask is peeled off from the base film without any mechanical damages to the lower structures. The mobility in the saturation regime is 0.4 cm(2)/V s and the on-off ratio exceeds 10(5). (C) 2007 American Institute of Physics.