Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
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DOI：
10.1116/1.2905246
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发表时间：
2008-06
期刊：
影响因子：
--
通讯作者：
P. Ye
中科院分区：
文献类型：
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作者：
P. Ye
由于缺乏合适的栅极绝缘体，实用的GaAs金属氧化物半导体场效应晶体管（MOSFET）在过去的四十多年里一直是一个梦想。III-V族化合物半导体表面或界面的物理和化学是非常复杂的问题，即使经过巨大的研究努力，我们的理解仍然有限。大多数研究都集中在表面预处理，氧化物形成和介电材料上;很少关注III-V衬底本身。本文旨在说明与III-V族衬底相关的器件物理与表面化学对于实现高性能III-V族MOSFET同样重要。简要回顾了III-V族MOSFET的研究历史和现状。提出了一个基于电荷中性水平的模型来解释他在III-V MOSFET上使用非原位原子层沉积的高k MOSFET进行的所有实验工作。该模型也可以解释所有报道的实验观察III-V MOSFET使用原位分子束expitaxy-grown的Ga 2 O 3（Gd 2 O 3）作为栅极介质。由于缺乏合适的栅极绝缘体，实用的GaAs金属氧化物半导体场效应晶体管（MOSFET）在过去的四十多年里一直是一个梦想。III-V族化合物半导体表面或界面的物理和化学是非常复杂的问题，即使经过巨大的研究努力，我们的理解仍然有限。大多数研究都集中在表面预处理，氧化物形成和介电材料上;很少关注III-V衬底本身。本文旨在说明与III-V族衬底相关的器件物理与表面化学对于实现高性能III-V族MOSFET同样重要。简要回顾了III-V族MOSFET的研究历史和现状。提出了一个基于电荷中性水平的模型来解释他在III-V MOSFET上使用非原位原子层沉积的高k MOSFET进行的所有实验工作。该模型也可以解释所有报道的实验观察III-V MOSFET使用…
Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have remained all but a dream for more than four decades. The physics and chemistry of III–V compound semiconductor surfaces or interfaces are problems so complex that our understanding is still limited even after enormous research efforts. Most research is focused on surface pretreatments, oxide formation, and dielectric materials; less attention is paid to the III–V substrate itself. The purpose of this article is to show that device physics more related to III–V substrates is as important as surface chemistry for realizing high-performance III–V MOSFETs. The history and present status of III–V MOSFET research are briefly reviewed. A model based on the charge neutrality level is proposed to explain all experimental work he performed on III–V MOSFETs using ex situ atomic-layer-deposited high-k dielectrics. This model can also explain all reported experimental observations on III–V MOSFETs using in situ molecular-beam-expitaxy-grown Ga2O3(Gd2O3) as a gate dielectric. Related perspectives are also discussed to understand III–V MOS capacitance-voltage measurements.Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have remained all but a dream for more than four decades. The physics and chemistry of III–V compound semiconductor surfaces or interfaces are problems so complex that our understanding is still limited even after enormous research efforts. Most research is focused on surface pretreatments, oxide formation, and dielectric materials; less attention is paid to the III–V substrate itself. The purpose of this article is to show that device physics more related to III–V substrates is as important as surface chemistry for realizing high-performance III–V MOSFETs. The history and present status of III–V MOSFET research are briefly reviewed. A model based on the charge neutrality level is proposed to explain all experimental work he performed on III–V MOSFETs using ex situ atomic-layer-deposited high-k dielectrics. This model can also explain all reported experimental observations on III–V MOSFETs using ...