Comparison of analytical methods for residue detection of resist removal processes
Comparison of analytical methods for residue detection of resist removal processes
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DOI：
10.4028/www.scientific.net/ssp.65-66.215
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发表时间：
1999-01-01
期刊：
影响因子：
--
通讯作者：
Muukkonen, E
中科院分区：
文献类型：
--
作者：
Riihisaari, T;Likonen, J;Muukkonen, E
In integrated circuits fabrication photoresist layers are used as a pattern definition in etching and as a mask in ion implantation. Since photoresist layers are only used as an intermediate step and are not incorporated in the final structure, photoresist layers need to be thoroughly removed from the wafer surface. In this work we have evaluated the use of different on-line and off-fine analytical methods for the detection of process residues of photoresist removal.
