Controlling Magnon Interaction by a Nanoscale Switch
Controlling Magnon Interaction by a Nanoscale Switch
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通过纳米级开关控制磁振子相互作用
DOI：
10.1021/acsami.1c01562
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发表时间：
2021
影响因子：
9.5
通讯作者：
Barsukov, Igor
中科院分区：
文献类型：
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作者：
Etesamirad, Arezoo;Rodriguez, Rodolfo;Bocanegra, Joshua;Verba, Roman;Katine, Jordan;Krivorotov, Ilya N.;Tyberkevych, Vasyl;Ivanov, Boris;Barsukov, Igor
控制和调节磁耗散的能力是新兴自旋电子技术的一个关键概念。磁振子散射过程构成了纳米磁体的主要耗散通道，重新定义了它们对自旋扭矩的响应，并有望在量子水平上操纵磁态。控制纳米磁体中的这些过程虽然对于自旋电子学应用至关重要，但仍然难以实现。在这里，我们提出了一种通过产生纳米级不均匀磁场的开关来控制磁振子散射的方法。我们提供了磁性隧道结纳米器件的实验演示，该器件由自由层和合成反铁磁体组成。通过触发合成反铁磁体中的自旋翻转跃迁并利用其杂散场，自由层中的磁振子相互作用被切换。这些结果为磁神经形态应用中的非线性调节和混合量子信息技术中的相干磁振子耦合工程开辟了途径。
The ability to control and tune magnetic dissipation is a key concept of emergent spintronic technologies. Magnon scattering processes constitute a major dissipation channel in nanomagnets, redefine their response to spin torque, and hold the promise for manipulating magnetic states on the quantum level. Controlling these processes in nanomagnets, while being imperative for spintronic applications, has remained difficult to achieve. Here, we propose an approach for controlling magnon scattering by a switch that generates nonuniform magnetic field at nanoscale. We provide an experimental demonstration in magnetic tunnel junction nanodevices, consisting of a free layer and a synthetic antiferromagnet. By triggering the spin-flop transition in the synthetic antiferromagnet and utilizing its stray field, magnon interaction in the free layer is toggled. The results open up avenues for tuning nonlinearities in magnetic neuromorphic applications and for engineering coherent magnon coupling in hybrid quantum information technologies.