Properties of Heavily Mn-doped GaMnAs with Curie Temperature of 172.5 K
Properties of Heavily Mn-doped GaMnAs with Curie Temperature of 172.5 K
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DOI：
10.1007/s10948-007-0238-3
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发表时间：
2007-08
影响因子：
1.8
通讯作者：
K. Ohno;S. Ohya;Masaaki Tanaka
中科院分区：
文献类型：
--
作者：
K. Ohno;S. Ohya;Masaaki Tanaka
采用分子束外延技术，在250 °C的较高生长温度下生长了Mn浓度为15.2%的重掺Mn铁磁半导体Ga 1 −xMnxAs薄膜，研究了其磁性.磁性圆二色性和反常霍尔效应的测量表明，该薄膜具有本征铁磁半导体的特性。通过低温退火，样品的电阻率显著降低，居里温度从95 K提高到172.5 K。
The authors have investigated the magnetic properties of heavily Mn-doped ferromagnetic semiconductor Ga1−xMnxAs thin film with the Mn concentrationxof 15.2% grown by molecular-beam epitaxy at relatively high growth temperature of 250 °C. Magnetic circular dichroism and the anomalous Hall effect measurements indicate that this thin film holds the intrinsic ferromagnetic semiconductor features. By low-temperature annealing, the resistivity was significantly decreased and the Curie temperature was largely enhanced from 95 K to 172.5 K.