Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS
Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS
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DOI：
10.1109/ted.2021.3072019
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发表时间：
2021-06-01
影响因子：
3.1
通讯作者：
Zhang, Bo
中科院分区：
文献类型：
--
作者：
Zhou, Xin;Li, Zhixuan;Zhang, Bo
本文研究了高压绝缘体上硅 (SOI) 横向扩散金属氧化物半导体 (LDMOS) 对未封闭边缘终端的总电离剂量 (TID) 辐射响应。提出了辐射引起的双通道漏电流模型，以揭示关断状态下漏电流产生的机制。辐射导致场氧化物（FOX）层和掩埋氧化物层中产生大量正氧化物俘获电荷。由于P-SOI层的掺杂浓度极低，在边缘终止区的表面和底部形成了两个反型沟道，提供了平行的传导路径。来自源 N+ 的电子被下拉并沿着底部通道流动，同时发生穿通。可以通过减薄FOX层、增加P-SOI层的掺杂浓度以及加厚SOI层来抑制辐射引起的漏电流。
Total-ionizing-dose (TID) radiation response on unclosed edge termination is investigated for high voltage silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) in this article. Radiation-induced dual-channel leakage current model is proposed to reveal the mechanism of leakage current generation at OFF-state. Radiation causes a mass of positive oxide trapped charges generated in field oxide (FOX) layer and buried oxide layer. Owing to the P-SOI layer with significantly low doping concentration, two inversion channels are formed at the surface and bottom in the edge termination region, which provides parallel conduction paths. Electrons from the source N+ are pulled down and flow along the bottom channel while punchthrough occurring. The radiation-induced leakage current could be suppressed by thinning FOX layer, increasing the doping concentration of the P-SOI layer, and thickening the SOI layer.