Mesoporous Semimetallic Conductors: Structural and Electronic Properties of Cobalt Phosphide Systems
Mesoporous Semimetallic Conductors: Structural and Electronic Properties of Cobalt Phosphide Systems
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介孔半金属导体：磷化钴体系的结构和电子性能
DOI：
10.1002/ange.201707878
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Yusuke Yamauchi
中科院分区：
文献类型：
--
作者：
Malay Pramanik;Satoshi Tominaka;Zhong-Li Wang;Toshiaki Takei;Yusuke Yamauchi
以有序介孔氧化钴（meso‐Co3O4）为原料，进行了介孔磷化钴（meso‐CoP）的磷化反应。介孔CoP的电导率是无孔CoP的37倍，在296 K以下的温度下表现出可忽略不计的小活化能26 meV的半金属行为。在此温度以上，只有中孔材料的导电性从半金属转变为半导体。这些性能归因于纳米晶Co2P相的共存。介孔材料结晶度差经常被认为是一个问题，但这个例子清楚地显示了它的积极方面。因此，这里介绍的概念将为合成具有高电子导电性的材料开辟新的途径。
Mesoporous cobalt phosphide (meso‐CoP) was prepared by the phosphorization of ordered mesoporous cobalt oxide (meso‐Co3O4). The electrical conductivity of meso‐CoP is 37 times higher than that of nonporous CoP, and it displays semimetallic behavior with a negligibly small activation energy of 26 meV at temperatures below 296 K. Above this temperature, only materials with mesopores underwent a change in conductivity from semimetallic to semiconducting behavior. These properties were attributed to the coexistence of nanocrystalline Co2P phases. The poor crystallinity of mesoporous materials has often been considered to be a problem but this example clearly shows its positive aspects. The concept introduced here should thus lead to new routes for the synthesis of materials with high electronic conductivity.