High-Speed Preparation of <111>- and <110>-Oriented β-SiC Films by Laser Chemical Vapor Deposition
High-Speed Preparation of <111>- and <110>-Oriented β-SiC Films by Laser Chemical Vapor Deposition
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DOI：
10.1111/jace.12706
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发表时间：
2014-03-01
影响因子：
3.9
通讯作者：
Zhang, Lianmeng
中科院分区：
文献类型：
--
作者：
Zhang, Song;Xu, Qingfang;Zhang, Lianmeng
以< 111 >< 110 >HMDS（Si（CH_3）（3）-Si（CH_3）（3））为前驱体，采用激光化学气相沉积法，在Si（100）单晶衬底上制备了高度取向的β-SiC薄膜。研究了激光功率（P-L）、总压（P-tot）和沉积温度（T-dep）对薄膜取向、微观结构和沉积速率（R-dep）的影响。随着P-L和P-tot的增加，β-SiC薄膜的取向由无规向< 111 >无规转变< 110 >。的< 111 >-，随机，和< 110 >-取向的β-SiC薄膜表现出致密，菜花状，锥状的微观结构，分别。在-和-取向膜中观察到堆垛层错< 111 >< 110 >，并且在-取向膜中堆垛层错平行于（111）面排列< 111 >，而在-取向膜中堆垛层错垂直于（110）面< 110 >排列。在< 111 >P-tot= 200 Pa，T-dep= 1420 K时，β-SiC薄膜的最大R-dep为200 m/h，而在< 110 >P-tot= 600 Pa，T-dep= 1605 K时，β-SiC薄膜的最大R-dep为3600 m/h。
Highly oriented < 111 > and < 110 > beta-SiC films were prepared on Si(100) single crystal substrates by laser chemical vapor deposition using a diode laser (wavelength=808nm) and HMDS (Si(CH3)(3)-Si(CH3)(3)) as a precursor. The effects of laser power (P-L), total pressure (P-tot), and deposition temperature (T-dep) on the orientation, microstructure, and deposition rate (R-dep) were investigated. The orientation of the beta-SiC films changed from < 111 > to random to < 110 > with increasing P-L and P-tot. The < 111 >-, randomly, and < 110 >-oriented beta-SiC films exhibited dense, cauliflower-like, and cone-like microstructures, respectively. Stacking faults were observed in the < 111 >- and < 110 >-oriented films, and aligned parallel to the (111) plane in the < 111 >-oriented film, whereas they were perpendicular to the (110) plane in the < 110 >-oriented film. The highest R-dep of the < 111 >-oriented beta-SiC film was 200m/h at P-tot=200Pa and T-dep=1420K, whereas that of the < 110 >-oriented film was 3600m/h at P-tot=600Pa and T-dep=1605K.