Enhanced Photoelectrochemical Properties of Zn-Ag-In-Te Nanocrystals with High Energy Photon Excitation
Enhanced Photoelectrochemical Properties of Zn-Ag-In-Te Nanocrystals with High Energy Photon Excitation
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DOI：
10.1002/cnma.201900241
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发表时间：
2019-08-01
期刊：
影响因子：
3.8
通讯作者：
Torimoto, Tsukasa
中科院分区：
文献类型：
--
作者：
Kameyama, Tatsuya;Sugiura, Kouta;Torimoto, Tsukasa
基于I - III - VI族且毒性较低的多元纳米晶体（NCs）在高效光能转换系统的制造中备受关注。在此，我们报道了在近红外区域具有可控能隙的ZnTe - AgInTe₂固溶体（ZAITe）纳米晶体独特的光电化学性质。固定在氧化铟锡（ITO）电极上且厚度小于单粒子层的ZAITe纳米晶体，其光电化学行为类似于p型半导体的光响应，与ZAITe纳米晶体多层膜显著不同：当照射能量高于约2.5 eV的光子时，阴极光电流的起始电位比ZAITe纳米晶体价带顶更正移，且光电流产生效率显著提高。这些现象可以通过ZAITe纳米晶体向ITO电极的直接热空穴转移来很好地解释。
Multinary nanocrystals (NCs) of I-III-VI-based semiconductors with less toxicity have attracted much attention for the fabrication of efficient light-energy conversion systems. Here we report unique photoelectrochemical properties of ZnTe-AgInTe2 solid solution (ZAITe) NCs with a controllable energy gap in near-IR region. The photoelectrochemical behavior of ZAITe NCs immobilized on an ITO electrode with a thickness of less than one monoparticle layer, resembling a p-type semiconductor photoresponse, was remarkably different from that of ZAITe NC multilayer films: The onset of a cathodic photocurrent was shifted more positively than that of the valence band maximum of ZAITe NCs and the photocurrent generation efficiency was significantly increased, when photons with energy higher than ca. 2.5 eV were irradiated. These phenomena can be explained well by the direct hot hole transfer from ZAITe NCs to the ITO electrode.