On-wafer magnetically tunable millimeter wave notch filter using M-phase Ba hexagonal ferrite/Pt thin films on Si
On-wafer magnetically tunable millimeter wave notch filter using M-phase Ba hexagonal ferrite/Pt thin films on Si
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DOI：
10.1063/1.4900519
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发表时间：
2014-10
影响因子：
4
通讯作者：
I. Harward;R. Camley;Z. Celinski
中科院分区：
文献类型：
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作者：
I. Harward;R. Camley;Z. Celinski
一个完全集成的晶片上，磁可调带阻滤波器工作在毫米波频率的原型是在硅基板上。与早期的研究相比，该滤波器使用了一个非常薄的钡六角铁氧体薄膜纳入微带传输线的电介质层过滤信号。零场工作频率约为34 GHz，随着静态垂直施加磁场的强度以约2.7 GHz/kOe的速率线性增加。实验上，同时观察到谐振频率处的高信号衰减（33-67 dB/cm）和低至4.5 dB的插入损耗，而3 dB器件带宽通常低于1 GHz。我们的计算与实验结果定量一致。我们还发现了一个重要的结果，即Pt接地层的厚度和导电性在插入损耗中起着关键作用，表明了进一步改进的方向。
A prototype of a fully integrated on-wafer, magnetically tunable band-stop filter operating at millimeter wave frequencies is demonstrated on a Si substrate. In contrast to earlier studies, the filter uses a very thin barium hexagonal ferrite film incorporated into the dielectric layer of a microstrip transmission line to filter the signal. The zero-field operational frequency is about 34 GHz, increasing linearly with the strength of a static, perpendicularly applied magnetic field at a rate of about 2.7 GHz/kOe. Experimentally, high signal attenuation (33–67 dB/cm) at the resonance frequency and insertion losses as low as 4.5 dB were simultaneously observed, while the 3 dB device bandwidths were generally below 1 GHz. Our calculations are in quantitative agreement with the experimental results. We also find an important result that the thickness and conductivity of the Pt ground plane plays a key role in insertion losses, indicating directions for further improvements.