Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure
Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure
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DOI：
10.1021/nl3003254
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发表时间：
2012-05-01
期刊：
影响因子：
10.8
通讯作者：
Lee, Changhee
中科院分区：
文献类型：
--
作者：
Kwak, Jeonghun;Bae, Wan Ki;Lee, Changhee
我们报告高亮度和高效的倒置结构量子点（QD）的发光二极管（QLED），通过使用溶液处理的ZnO纳米粒子作为电子注入/传输层，并通过优化有机空穴传输层的能级。我们已经成功地展示了高亮度的红色，绿色和蓝色QLED显示最大亮度高达23 040，218 800和2250 cd/m（2），和外部量子效率分别为7.3，5.8和1.7%。还值得注意的是，它们显示出与每个QD的带隙能量一样低的开启电压和长的工作寿命，这主要归因于通过倒置器件结构在QD内的直接激子复合。这些结果标志着量子点发光二极管的一个显著进展，并为实现基于量子点的全色显示和照明提供了一个可行的平台。
We report highly bright and efficient inverted structure quantum dot (QD) based light-emitting diodes (QLEDs) by using solution-processed ZnO nanoparticles as the electron injection/transport layer and by optimizing energy levels with the organic hole transport layer. We have successfully demonstrated highly bright red, green, and blue QLEDs showing maximum luminances up to 23 040, 218 800, and 2250 cd/m(2), and external quantum efficiencies of 7.3, 5.8, and 1.7%, respectively. It is also noticeable that they showed turn-on voltages as low as the bandgap energy of each QD and long operational lifetime, mainly attributed to the direct exciton recombination within QDs through the inverted device structure. These results signify a remarkable progress in QLEDs and offer a practicable platform for the realization of QD-based full-color displays and lightings.