H.Kobayashi: "Studies on interface states at ultrathin. SiO_2/Si(100)interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide" Journal of Applied Physics. 83(4). 2098-2103 (1998)
H.Kobayashi: "Studies on interface states at ultrathin. SiO_2/Si(100)interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide" Journal of Applied Physics. 83(4). 2098-2103 (1998)
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H.Kobayashi：“通过偏压下的 X 射线光电子能谱研究超薄 SiO_2/Si(100) 界面的界面态及其氰化物钝化”应用物理学杂志。
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