Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well
Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well
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硅量子阱中部分填充的朗道能级交叉引起的绝缘相
DOI：
10.1103/physrevb.79.241302
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发表时间：
2009
影响因子：
3.7
通讯作者：
and Y. Shiraki
中科院分区：
文献类型：
--
作者：
T. Okamoto;K. Sasaki;K. Toyama;R. Masutomi;K. Sawano;and Y. Shiraki
通过样品相对于磁场的原位倾斜，研究了高迁移率Si二维电子系统的磁输运。在朗道水平交叉过程中观察到的非整数填充因子的纵向电阻率的显着下降。与霍尔电阻率的变化，表现出粒子-空穴对称性，这表明，在相关的朗道水平的电子或空穴成为本地化的符合，其中的赝自旋非极化状态预计是稳定的。
We study magnetotransport in a high-mobility Si two-dimensional electron system byin situtilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau-level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.