Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy
Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy
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DOI：
10.35848/1347-4065/abb75b
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发表时间：
2020-09
影响因子：
1.5
通讯作者：
A. Ohta;T. Imagawa;N. Taoka;M. Ikeda;K. Makihara;S. Miyazaki
中科院分区：
文献类型：
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作者：
A. Ohta;T. Imagawa;N. Taoka;M. Ikeda;K. Makihara;S. Miyazaki
我们通过紫外光电子能谱 (UPS) 测量研究了 Si 表面和 SiO2/Si 体系的能带图。在 UPS 测量中，使用可变入射光子能量低于 10.50 eV 的单色真空紫外线，以提高距表面深度的检测极限，并了解不仅在表面而且在堆叠结构界面附近区域的电子态。根据 UPS 光谱宽度的入射光子能量依赖性，评估了 H 终止 Si 表面的价带顶部的能级以及 SiO2/Si 结构中的电势变化。此外，还研究了异质外延 Ag(111) 表面的真空功函数值，以检查该测量技术。
We have studied the energy band diagram for the Si surface and SiO2/Si system by using ultraviolet photoelectron spectroscopy (UPS) measurements. In the UPS measurements, monochromatized vacuum ultraviolet with variable incident photon energies below 10.50 eV was used in order to increase the detection limit of the depth from the surface and to understand the electronic states not only at the surface but also in the region near the interface of the stacked structure. From the incident photon energy dependence of the UPS spectral width, the energy level of the valence band top of the H-terminated Si surface and the electrical potential change in the SiO2/Si structure has been evaluated. Also, the vacuum work function value of the hetero-epitaxial Ag(111) surface has been investigated to check this measurement technique.