Similarities in photoluminescence in hafnia and zirconia induced by ultraviolet photons
Similarities in photoluminescence in hafnia and zirconia induced by ultraviolet photons
复制标题
DOI：
10.1063/1.1856220
复制
发表时间：
2005-02
影响因子：
3.2
通讯作者：
Toshihide Ito;M. Maeda;Kazuhiko Nakamura;H. Kato;Y. Ohki
中科院分区：
文献类型：
--
作者：
Toshihide Ito;M. Maeda;Kazuhiko Nakamura;H. Kato;Y. Ohki
测量了等离子体增强化学气相沉积（PECVD）沉积的非晶氧化钇和氧化锆、脉冲激光沉积沉积的非晶氧化钇和结晶氧化钇稳定的氧化锆的紫外光子诱导的光致发光（PL）谱。在不同的沉积室中，使用不同的醇盐源，制备了两种用于PECVD沉积的氧化铝和氧化锆的样品。在所有氧化铈和氧化锆样品中类似地在2.8eV附近观察到PL峰，而不管结晶度、氧缺乏、源醇盐、沉积方法或衬底材料的差异。该PL的衰减曲线在所有样品中也是相似的。这些事实清楚地表明，无论是杂质，氧空位，也没有在样品和衬底之间的界面处的缺陷是负责的PL。它是氧化铈和氧化锆中固有的发光，并且最有可能是由于带尾处的局域态之间的辐射复合。当samp…
Photoluminescence (PL) spectra induced by ultraviolet photons were measured for amorphous hafnia and zirconia deposited by plasma-enhanced chemical-vapor deposition (PECVD), amorphous hafnia deposited by pulse laser deposition, and crystalline yttria-stabilized zirconia. Two kinds of samples were prepared for both hafnia and zirconia deposited by PECVD using different source alkoxides in different deposition chambers. A PL peak was observed around 2.8eV similarly in all hafnia and zirconia samples, irrespective of the difference in crystallinity, oxygen deficiency, source alkoxide, deposition method, or the substrate material. The decay profile of this PL is also similar in all the samples. These facts clearly show that neither impurities, oxygen vacancy, nor defects at the interface between the sample and the substrate are responsible for the PL. It is a luminescence inherent in hafnia and zirconia and is most likely due to radiative recombination between localized states at the band tails. When the samp...