Hysteresis of Electronic Transport in Graphene Transistors
Hysteresis of Electronic Transport in Graphene Transistors
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DOI：
10.1021/nn101950n
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发表时间：
2010-12-01
期刊：
影响因子：
17.1
通讯作者：
Yu, Ting
中科院分区：
文献类型：
--
作者：
Wang, Haomin;Wu, Yihong;Yu, Ting
石墨烯场效应晶体管通常包括位于SiO2表面上的石墨烯薄片。依赖于栅极电压的电导示出了依赖于栅极扫描速率/范围的滞后。它示出在这里，晶体管表现出两种不同类型的滞后在其电特性。电荷转移引起最小电导的栅极电压的正向偏移，而电容选通可以引起电导相对于栅极电压的负向偏移。正滞后现象随着石墨烯片层数的增加而衰减。在氦气氛中的自加热显著地去除吸附物并减少正滞后。我们还观察到石墨烯器件在低温下的负滞后。还发现，石墨烯上/下的冰层具有比水层强得多的偶极矩。电解质栅极中的移动的离子和铁电栅极中的极性切换也可能导致石墨烯晶体管中的负滞后。这些发现提高了我们对石墨烯对其周围环境的电响应的理解。石墨烯对环境和相关现象的独特敏感性值得在非易失性存储器，静电检测和化学驱动应用方面进行进一步研究。
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an Increase of the number of layers in graphene flakes. Self-heating in a helium atmosphere significantly removes adsorbates and reduces positive hysteresis. We also observed negative hysteresis in graphene devices at low temperature. It is also found that an ice layer on/under graphene has a much stronger dipole moment than a water layer does. Mobile ions in the electrolyte gate and a polarity switch in the ferroelectric gate could also cause negative hysteresis in graphene transistors. These findings improved our understanding of the electrical response of graphene to its surroundings. The unique sensitivity to environment and related phenomena in graphene deserve further studies on nonvolatile memory, electrostatic detection, and chemically driven applications.