Time-dependent measurement of the trapped charge in electron irradiated insulators: Application to Al2O3–sapphire
Time-dependent measurement of the trapped charge in electron irradiated insulators: Application to Al2O3–sapphire
复制标题
电子辐照绝缘体中俘获电荷的时间相关测量：在 Al2O3-蓝宝石中的应用
DOI：
10.1063/1.1287131
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发表时间：
2000
影响因子：
3.2
通讯作者：
O. Jbara
中科院分区：
文献类型：
--
作者：
M. Belhaj;S. Odof;K. Msellak;O. Jbara
本文描述了一种用扫描电子显微镜研究电子轰击下绝缘体中电荷俘获的方法。通常用来推断捕获电荷量及其空间范围的技术是基于镜像效应，而在本方法中，电子束偏转是在一次辐照时测量的。我们在电子照射下测量了al2o3 -蓝宝石样品在一段时间内的捕获电荷。此外，还考察了电子束能量和电流对充电的影响，并详细讨论了该方法的误差。
A method is described which uses a scanning electron microscope for the investigation of charge trapping in insulators under electron bombardment. The technique commonly used to deduce the amount of trapped charge and its spatial extent is based on the mirror effect, while in the present approach the electron-beam deflections are measured during the primary irradiation. We have performed measurements of the trapped charge during time in an Al2O3–sapphire sample under electron irradiation. Furthermore, the effects of the electron-beam energy and current on charging are also examined and the errors concerning the method are discussed in detail.