Single Ion Implantation of Bismuth
Single Ion Implantation of Bismuth
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DOI：
10.1002/pssa.202000237
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发表时间：
2020-08-02
影响因子：
2
通讯作者：
Cox, David
中科院分区：
文献类型：
--
作者：
Cassidy, Nathan;Blenkinsopp, Paul;Cox, David
在此提出了从此处出现的，旨在植入量子技术的量子量的单个离子的结果。单离子植入的难度准确地计算了离子的影响。这是通过检测在每个离子撞击上产生的二级电子来实现的。报告了具有不同电荷态的单个二晶离子植入Si，ge，cu和au底物中，并确定了单个离子植入物的计数检测效率以及影响此类检测效率的因素。发现对于50个Bi ++离子在硅中的KEV植入物可以达到89％的检测效率，这是单个离子植入物在硅中的第一个定量检测效率测量，而无需通过厚的SiO2膜植入。这种计数准确性提供了单个杂质离子的植入，其成功率显着超过了随机（泊松式）植入可实现的植入。
Herein, the results from a focused ion beam instrument, designed to implant single ions with a view to the fabrication of qubits for quantum technologies, are presented. The difficulty of single ion implantation is accurately counting the ion impacts. This is achieved here through the detection of secondary electrons generated upon each ion impact. The implantation of single bismuth ions with different charge states into Si, Ge, Cu, and Au substrates is reported, and the counting detection efficiency for single ion implants and the factors that affect such detection efficiencies are determined. It is found that for 50 keV implants of Bi++ ions into silicon an 89% detection efficiency can be achieved, which is the first quantitative detection efficiency measurement for single ion implants into silicon without implanting through a thick SiO2 film. This level of counting accuracy provides implantation of single impurity ions with a success rate significantly exceeding that achievable by random (Poissonian) implantation.