Multi-structure ion sensitive field effect transistor with a metal light shield
Multi-structure ion sensitive field effect transistor with a metal light shield
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DOI：
10.1016/s0925-4005(99)00036-2
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发表时间：
1999-12-14
影响因子：
8.4
通讯作者：
Hsiung, SK
中科院分区：
文献类型：
--
作者：
Liao, HK;Wu, CL;Hsiung, SK
已知在照射期间离子敏感场效应晶体管（ISFET）中的光敏性是由于硅衬底中的载流子生成。为了改善这一缺点，本文研究了多结构ISFET：氧化锡/铝/绝缘体/硅ISFET器件。在该结构中，铝被用作光屏蔽，氧化锡被用作pH敏感层。我们分别研制了SnO_2/Si_3N_4/SiO_2/Si ISFET和SnO_2/Al/Si_3N_4/SiO_2/Si ISFET。测量了这些器件的pH灵敏度，数据表明，在室温光照条件下，SnO 2/Al/S3 N4/SiO2/Si ISFET传感器在pH 2和pH 10之间的浓度范围内具有约56-58 mV/pH的线性pH响应。随后，在2000 lx白色光曝光下研究了具有/不具有铝作为遮光罩的ISFET的光敏性。数据显示，与没有铝作为光屏蔽的ISFET相比，具有铝作为光屏蔽的ISFET具有低的光灵敏度。(C)1999年Elsevier Science S.A. All rights reserved.
It is known that light sensitivity in ion sensitive field effect transistors (ISFETs) during illumination is due to carrier generation in the silicon substrate. In order to improve this drawback, multi-structure ISFETs: tin oxide/Al/insulator/Si ISFET devices are investigated in this study. In this structure, aluminum is used as a light shield, and the tin oxide is used as a pH sensitive layer. We have developed SnO2/Si3N4/SiO2/Si ISFETs and SnO2/Al/Si3N4/SiO2/Si ISFETs, respectively. The pH sensitivity of these devices was measured and the data shows that the SnO2/Al/S3N4/SiO2/Si ISFET sensors have a linear pH response of about 56-58 mV/pH in a concentration range between pH2 and pH10 under room light conditions. Subsequently, the light sensitivity of the ISFETs with/without aluminum as a light shield were investigated under 2000 lx white light exposure. The data show that ISFETs with aluminum as a light shield have low light sensitivity compared with ISFETs without aluminum as a light shield. (C) 1999 Elsevier Science S.A. All rights reserved.