A+0.44°C/-0.4°C Inaccuracy Temperature Sensor With Multi-Threshold MOSFET-Based Sensing Element and CMOS Thyristor-Based VCO
A+0.44°C/-0.4°C Inaccuracy Temperature Sensor With Multi-Threshold MOSFET-Based Sensing Element and CMOS Thyristor-Based VCO
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DOI：
10.1109/tcsi.2020.3042825
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发表时间：
2021-03-01
影响因子：
5.1
通讯作者：
Yu, Qi
中科院分区：
文献类型：
--
作者：
Li, Jing;Lin, Yuyu;Yu, Qi
提出了一种采用多阈值MOSFET敏感元件的压控振荡器（VCO）温度传感器。所提出的温度传感器将温度变化转换为频率，然后转换为数字读数。在所提出的温度传感器中，由工作在亚阈值区且具有不同沟道掺杂浓度的P-MOSFET产生的两个参考电流的比率用于感测温度的变化，并且在一阶多项式拟合与系统非线性去除之后实现了+/-0.06 ° C的3 sigma不准确度。然后将电流比转换为两个相同的基于CMOS晶闸管的VCO的输出频率之差，这两个VCO都被优化以减轻电荷共享和电荷注入对温度传感器精度的影响。以这种方式，不需要生成外部参考时钟。该原型采用130 nm CMOS工艺制造，并实现了+0.44 ℃/-0.4 ℃的不准确度。所提出的传感器实现了0.1摄氏度的分辨率和0.12nJ.K-2的分辨率FoM。原型占地面积为0.07 mm（2）。
A VCO-based(Voltage Controlled Oscillator) temperature sensor with multi-threshold MOSFET based sensing element is proposed. The proposed temperature sensor converts temperature variation into frequency and then into digital readings. In the proposed temperature sensor, the ratio of two reference currents, generated by P-MOSFETs operated in subthreshold region and with different channel doping concentration, is used to sense the variation of temperature and achieves a 3 sigma inaccuracy of +/- 0.06 degrees C after first-order poly-fit with systematic nonlinearity removal. The ratio of currents is then transformed into difference of the output frequencies of two identical CMOS-thyristor based VCOs, both of which are optimized to alleviate the impact of charge sharing and charge injection on the precision of the temperature sensor. In this way, there is no need for generating an external reference clock. The prototype is fabricated in a 130nm CMOS process and achieves an inaccuracy of +0.44 degrees C/-0.4 degrees C. The proposed sensor achieves a resolution of 0.1 degrees C and a resolution FoM of 0.12nJ.K-2. The prototype occupies an area of 0.07mm(2).