In situ diagnostics of film thickness and surface roughness of diamond films on a Ti-6Al-4V alloy by optical pyrometry
In situ diagnostics of film thickness and surface roughness of diamond films on a Ti-6Al-4V alloy by optical pyrometry
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DOI：
10.1063/1.121748
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发表时间：
1998-07-13
影响因子：
4
通讯作者：
Vohra, YK
中科院分区：
文献类型：
--
作者：
Catledge, SA;Comer, W;Vohra, YK
用光学热分析法原位测量了Ti-6Al-4V合金在微波等离子体反应器中生长金刚石膜的厚度和表面粗糙度。薄膜的生长导致表观温度随时间的振荡，这可以用薄膜/空气和薄膜/衬底界面反射引起的干涉效应来解释。通过考虑吸收基片的复折射率，推导了控制金刚石/金属体系透光率的方程。利用这一关系对透射率的表观温度进行建模，以提取薄膜厚度、表面粗糙度和衬底真实温度的时间依赖性。观察到的生长速度表现出两种状态：最初的增长缓慢，随后的增长速度约为50%。表面粗糙度以几乎均匀的速率增加，但在较长的沉积时间内迅速达到饱和粗糙度（高表面粗糙度）。讨论了该模型在高表面粗糙度条件下的局限性。(C) 1998美国物理研究所。
The thickness and surface roughness of diamond films grown on a Ti-6Al-4V alloy in a microwave plasma reactor was measured in situ using optical pyrometry. The growing film results in oscillations of the apparent temperature with time, which can be explained by interference effects caused by reflections from the film/air and film/substrate interfaces. The equation governing the transmittance of the diamond/metal system has been derived by taking into account the complex index of refraction of an absorbing substrate. The apparent temperature was modeled using this relation for the transmittance in order to extract the time dependence of film thickness, surface roughness, and the true temperature of the substrate. The growth rate was observed to exhibit two regimes: an initial period of slowly increasing growth followed by a growth rate that was about 50% higher. The surface roughness increased at a nearly uniform rate but quickly reached a saturation roughness for long deposition times (high surface roughness). The limitation of the model for films in the high surface roughness regime is discussed. (C) 1998 American Institute of Physics.