Two-dimensional Wigner crystal in anisotropic semiconductors
Two-dimensional Wigner crystal in anisotropic semiconductors
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各向异性半导体中的二维维格纳晶体
DOI：
10.1103/physrevb.65.233209
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发表时间：
1999
影响因子：
3.7
通讯作者：
R. N. Bhatt
中科院分区：
文献类型：
--
作者：
Xin Wan;R. N. Bhatt
研究了质量各向异性对二维电子气中维格纳晶化转变的影响。本文计算了具有各向异性质量的任意二维Bravais晶格的二维Wigner晶体的静态和动态性质，这种性质可以在具有（110）面的Si金属氧化物半导体场效应晶体管以及新发现的有机半导体系统中得到。通过研究所有可能的晶格的稳定性，我们发现具有最低基态能量的电子晶格的晶体结构和熔化密度发生了显著的变化。
We investigate the effect of mass anisotropy on the Wigner crystallization transition in a two-dimensional (2D) electron gas. The static and dynamical properties of a 2D Wigner crystal have been calculated for arbitrary 2D Bravais lattices in the presence of anisotropic mass, as may be obtainable in Si metal-oxide-semiconductor field-effect transistors with (110) surface, as well as the newly discovered organic semiconductor systems. By studying the stability of all possible lattices, we find significant changes in the crystal structure and melting density of the electron lattice with the lowest ground state energy.