On-chip single-mode CdS nanowire laser
On-chip single-mode CdS nanowire laser
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DOI：
10.1038/s41377-020-0277-0
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发表时间：
2020-03-16
影响因子：
19.4
通讯作者：
Tong, Limin
中科院分区：
文献类型：
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作者：
Bao, Qingyang;Li, Weijia;Tong, Limin
通过将独立式硫化镉 (CdS) 纳米线集成到氮化硅 (SiN) 光子芯片上，我们展示了一种高度紧凑的片上单模 CdS 纳米线激光器。模式选择是使用马赫-曾德干涉仪（MZI）结构实现的。当泵浦强度超过 4.9 kW/cm(2) 的激光阈值时，可实现类似于 518.9 nm 的片上单模激光，线宽为 0.1 nm，边模抑制比高达 20 倍（13 dB）。纳米线激光器的输出通过倏逝耦合高效率（高达58%）导入片上SiN波导，通过预先设计SiN波导的耦合长度，两个输出端口之间的定向耦合比可以在90%至10%之间变化。我们的研究结果为纳米线光子器件和片上光源开辟了新的机遇，并可能为芯片集成应用的新型混合纳米激光器铺平道路。
By integrating a free-standing cadmium sulfide (CdS) nanowire onto a silicon nitride (SiN) photonic chip, we demonstrate a highly compact on-chip single-mode CdS nanowire laser. The mode selection is realized using a Mach-Zehnder interferometer (MZI) structure. When the pumping intensity exceeds the lasing threshold of 4.9 kW/cm(2), on-chip single-mode lasing at similar to 518.9 nm is achieved with a linewidth of 0.1 nm and a side-mode suppression ratio of up to a factor of 20 (13 dB). The output of the nanowire laser is channelled into an on-chip SiN waveguide with high efficiency (up to 58%) by evanescent coupling, and the directional coupling ratio between the two output ports can be varied from 90 to 10% by predesigning the coupling length of the SiN waveguide. Our results open new opportunities for both nanowire photonic devices and on-chip light sources and may pave the way towards a new category of hybrid nanolasers for chip-integrated applications.