Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire
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DOI：
10.1021/nl9042906
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发表时间：
2010-04-01
期刊：
影响因子：
10.8
通讯作者：
Park, Bae Ho
中科院分区：
文献类型：
--
作者：
Nagashima, Kazuki;Yanagida, Takeshi;Park, Bae Ho
由于其他非易失性存储器由于其工作原理而面临基本尺寸限制，因此强烈期望以亚光刻规模操作的多态非易失性存储器。金属-氧化物-金属结中的电阻开关（RS），即所谓的ReRAM，有望用于下一代高密度非易失性存储器。基于自组装氧化物纳米线的RS提供了一个有吸引力的解决方案，不仅可以将器件尺寸减小到当前光刻长度尺度的限制之外，而且还可以提取潜在的纳米级RS机制。在这里，我们展示了一个单一的Co 3 O 4纳米线（10纳米尺度）的多态双极RS的耐力高达10（8）。此外，我们成功地提取了电压诱导的纳米级RS机制，而不是电流诱导的RS。这些发现不仅为探索具有最终尺寸限制的内在纳米级RS机制，而且为下一代多态三维ReRAM开辟了机会。
A multistate nonvolatile memory operated at sublithographic scale has been strongly desired since other nonvolatile memories have confronted the fundamental size limits owing to their working principles. Resistive switching (RS) in metal-oxide-metal junctions, so-called ReRAM, is promising for next generation high-density nonvolatile memory. Self-assembled oxide nanowire-based RS offers an attractive solution not only to reduce the device size beyond the limitation of current lithographic length scales but also to extract the underlying nanoscale RS mechanisms. Here we demonstrate the multistate bipolar RS of a single Co3O4 nanowire (10 nm scale) with the endurance up to 10(8). In addition, we succeeded to extract a voltage-induced nanoscale RS mechanism rather than current-induced RS. These Findings would open up opportunities to explore not only for the intrinsic nanoscale RS mechanisms with the ultimate size limit but also for next generation multistate three-dimensional ReRAM.