Current jetting distorted planar Hall effect in a Weyl semimetal with ultrahigh mobility
Current jetting distorted planar Hall effect in a Weyl semimetal with ultrahigh mobility
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超高迁移率韦尔半金属中的电流喷射扭曲平面霍尔效应
DOI：
10.1103/physrevmaterials.3.014201
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发表时间：
2019
影响因子：
3.4
通讯作者：
Zhang C J
中科院分区：
文献类型：
--
作者：
Yang J;Zhen W L;Liang D D;Wang Y J;Yan X;Weng S R;Wang J R;Tong W;Pi L;Zhu W K;Zhang C J
在具有双金属迁移率的半导体材料TaP中观察到巨平面霍尔效应和各向异性磁电阻效应。垂直电阻率（即，垂直于电流施加的平面磁场）远远超过零场电阻率，这因此排除了负纵向磁阻的可能起源。巨PHE/AMR最终归因于大的各向异性的轨道磁电阻，源于磁迁移率。此外，迁移率增强的电流喷射效应被发现强烈变形的曲线的线形，和他们的演变与变化的磁场和温度也进行了研究。尽管巨大的PHE/AMR表明在自旋电子学中有前途的应用，但增强的电流喷射显示了硬币的另一面，需要在未来的设备设计中考虑这一点。
A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current) far exceeds the zero-field resistivity, which thus rules out the possible origin of negative longitudinal magnetoresistance. The giant PHE/AMR is finally attributed to the large anisotropic orbital magnetoresistance that stems from the ultrahigh mobility. Furthermore, the mobility-enhanced current jetting effects are found to strongly deform the line shape of the curves, and their evolution with the changing magnetic field and temperature is also studied. Although the giant PHE/AMR suggests promising applications in spintronics, the enhanced current jetting shows the other side of the coin, which needs to be considered in the future device design.