Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 mu m and their feasibility for waveguide quasi-phase matching
Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 mu m and their feasibility for waveguide quasi-phase matching
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DOI：
10.1364/josab.14.001428
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发表时间：
1997-06-01
影响因子：
1.9
通讯作者：
Stegeman, GI
中科院分区：
文献类型：
--
作者：
Ueno, Y;Ricci, V;Stegeman, GI
分析了外延生长的有序和无序Ga0.5In0.5P半导体晶体薄膜的二阶极化率(d(Ij))。提出了基于周期有序无序区的准相位匹配方法，分析表明d(33)‘d(31)’和d(15)‘但不能调制d(14)’四个独立系数中的三个是可以调制的。在1.57微米处进行了Maker条纹实验，测量了沉积晶体中的这些系数。然而，晶体-薄膜取向只允许确定d(14)‘系数(110 pm/V)，而d’(33)的上限为60 pm/V。提出了更复杂的测量d‘(33)的实验技术。(C)1997年美国光学学会。
The second-order susceptibilities (d(ij)) of both ordered and disordered Ga0.5In0.5P semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order-disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, d(33)' d(31)', and d(15)' but not d(14)' can be modulated. Maker-fringe experiments were performed at 1.57 mu m to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the d(14)' coefficient (110 pm/V) only and an upper limit of 60 pm/V for d'(33). More-sophisticated experimental techniques are proposed for measuring d'(33). (C) 1997 Optical Society of America.