Laser ranging at 1550 nm with 1-GHz sine-wave gated InGaAs/InP APD single-photon detector
Laser ranging at 1550 nm with 1-GHz sine-wave gated InGaAs/InP APD single-photon detector
复制标题
使用 1 GHz 正弦波门控 InGaAs/InP APD 单光子探测器进行 1550 nm 激光测距
DOI：
10.1364/oe.19.013497
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发表时间：
2011-07-04
期刊：
影响因子：
3.8
通讯作者：
Zeng, Heping
中科院分区：
文献类型：
--
作者：
Ren, Min;Gu, Xiaorong;Zeng, Heping
我们演示了一种1550 nm单光子探测激光测距系统。单光子探测器为1 ghz正弦波门控InGaAs/InP雪崩光电二极管。在白天，使用基于时间相关单光子计数测量的飞行时间方法直接实现了8厘米的深度分辨率。该系统为低能级、人眼安全的远程激光测距系统提供了潜力。(C) 2011美国光学学会
We demonstrated a laser ranging system with single photon detection at 1550 nm. The single-photon detector was a 1-GHz sine-wave gated InGaAs/InP avalanche photodiode. In daylight, 8-cm depth resolution was achieved directly by using a time-of-flight approach based on time-correlated single photon counting measurement. This system presented a potential for low energy level and eye-safe laser ranging system in long-range measurement. (C) 2011 Optical Society of America