Studying carrier lifetime in InAs/GaAs quantum dot devices by optically pump - terahertz probe measurements
Studying carrier lifetime in InAs/GaAs quantum dot devices by optically pump - terahertz probe measurements
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通过光泵 - 太赫兹探针测量研究 InAs/GaAs 量子点器件中的载流子寿命
DOI:
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发表时间:
2015
期刊:
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通讯作者:
Leite I
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文献类型:
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作者:
Leite I