Topological Insulator: Surface Localized States
Topological Insulator: Surface Localized States
复制标题
拓扑绝缘体：表面局域态
DOI：
10.1007/s10948-018-4827-0
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发表时间：
2019
影响因子：
1.8
通讯作者：
Yu. N. Ovchinnikov
中科院分区：
文献类型：
--
作者：
Yu. N. Ovchinnikov
分析了体激发谱中能隙值较小的样品在表面附近形成局域态的可能性。这种现象的存在对于在激发谱中具有二次曲线奇异性的窄禁带绝缘体来说更为现实。然而，这种奇异性的存在并不足以形成表面局域态。创造表面的附加势起着重要作用。
The possibility of formation of the localized states near the surface for the sample with small energy gap value in the bulk excitation spectrum is analysed. The existence of such a phenomenon is more realistic for narrow gap insulator with conic singularity in the excitation spectrum. Nevertheless, existence of such singularity is not sufficient for formation of surface localized states. Essential role is played by additional potential, which creates the surface.