A New Physical Mechanism for Soft Errors in Dynamic Memories
A New Physical Mechanism for Soft Errors in Dynamic Memories
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DOI：
10.1109/irps.1978.362815
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发表时间：
1978-04
期刊：
影响因子：
--
通讯作者：
T. May;M. H. Woods
中科院分区：
文献类型：
--
作者：
T. May;M. H. Woods
在动态ram和ccd中，一种新的物理软误差机制是由于高电离辐射通过存储阵列区域而导致存储数据被打乱。α粒子是在包装材料中百万分之一的铀和钍的放射性衰变中释放出来的。当α粒子穿透芯片表面时，它可以在存储节点附近产生足够的电子空穴对，从而导致随机的单比特错误。本文报道了材料α活度的实验和测量结果，并建立了软误差的物理模型。对未来动态记忆的影响也进行了讨论。
A new physical soft error mechanism in dynamic RAMs and CCDs is the upset of stored data by the passage of heavily-ionizing radiation through the memory array area. Alpha particles are emitted in the radioactive decay of uranium and thorium present in parts-per-million levels in packaging materials. When an alpha particle penetrates the die surface, it can create enough electron-hole pairs near a storage node to cause a random, single-bit error. Results of experiments and measurements of alpha activity of materials are reported and a physical model for the soft error is developed. Implications for the future of dynamic memories are also discussed.