Dynamic heating in submicron size magnetic tunnel junctions with exchange biased storage layer
Dynamic heating in submicron size magnetic tunnel junctions with exchange biased storage layer
复制标题
具有交换偏置存储层的亚微米尺寸磁隧道结的动态加热
DOI：
10.1063/1.1850392
复制
发表时间：
2005
影响因子：
3.2
通讯作者：
P. Xavier
中科院分区：
文献类型：
--
作者：
M. Kerekes;R. Sousa;I. Prejbeanu;O. Redon;U. Ebels;C. Baraduc;B. Dieny;J. Nozieres;P. Freitas;P. Xavier
研究了为热磁写入方案开发的亚微米级结的动态加热。测量了加热功率密度与电压脉冲宽度(Δt)的关系，在所研究的脉冲宽度范围(5 ns-1s)内，呈现[1−exp(−Δt/t0)]唯象变化。对于亚微米结区和恒定脉冲宽度，写入所需的加热功率随着结区面积的减小而降低。通过在两个低和高电阻电平之间循环单元，证明了热磁写入方案。该方案还被证明即使在没有存储器的任何磁屏蔽的情况下也对杂散磁场不敏感。
The dynamic heating of submicron size junctions developed for the thermomagnetic write scheme was investigated. The dependency of the heating power density with the voltage pulse width (Δt) was measured and shows a [1−exp(−Δt∕t0)] phenomenological variation in the investigated range of pulse widths (5ns–1s). For submicron junction areas and constant pulse width, the heating power required for writing decreases as the junction area is reduced. The thermomagnetic write scheme was demonstrated through cycling of the cell between the two low and high resistance levels. This scheme was also shown to be insensitive to stray magnetic fields even in absence of any magnetic shielding of the memory.