Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts
Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide nanobelts
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DOI：
10.1039/c0nr00702a
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发表时间：
2011-01-01
期刊：
影响因子：
6.7
通讯作者：
Golberg, Dmitri
中科院分区：
文献类型：
--
作者：
Li, Liang;Auer, Erwin;Golberg, Dmitri
我们利用单个Ga2O_3纳米带设计了日盲深紫外光半导体光电探测器。对其光导行为进行了系统研究。该光电探测器对2 5 0 nm光有很高的选择性，响应时间小于0.3S，大的光电流与暗电流之比高达4个数量级。光响应参数如光电流、响应时间和量子效率强烈地依赖于光的强度、探测器的环境和纳米带的尺寸。讨论了其光响应机制，主要归因于能带弯曲、表面陷阱和陷阱在带隙中的分布。目前的Ga2O_3纳米带可用于光敏、发光二极管和光开关等领域。
We designed solar-blind deep-ultraviolet semiconductor photodetectors using individual Ga2O3 nanobelts. The photoconductive behavior was systematically studied. The photodetectors demonstrate high selectivity towards 250 nm light, fast response times of less than 0.3 s, and a large photocurrent to dark current ratio of up to 4 orders of magnitude. The photoresponse parameters such as photocurrent, response time, and quantum efficiency depend strongly on the intensity of light, the detector environment, and the nanobelt size. The photoresponse mechanism was discussed, which was mainly attributed to the band bending, surface traps, and distribution of traps in the bandgap. Present Ga2O3 nanobelts can be exploited for future applications in photo sensing, light-emitting diodes, and optical switches.