Diffusion of ion-implanted boron in germanium
Diffusion of ion-implanted boron in germanium
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离子注入硼在锗中的扩散
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
M. Dowsett
中科院分区：
文献类型：
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作者：
Surresh Uppal;A. Willoughby;J. Bonar;A. Evans;N. Cowern;R. Morris;M. Dowsett
研究了硼（B）在锗（Ge）中的扩散。采用离子注入法在Ge中引入了B，并利用二次离子质谱仪获得了退火后的浓度分布。通过拟合实验得到的分布，计算出B在Ge中的扩散系数和固溶度分别为1.5（+/-0.3 x10 ~（-16）cm ~ 2/s）和5.5（+/-1.0 x10 ~（-18）cm ~ 3）。扩散系数的值至少比文献中报道的B在Ge中扩散的最小值低两个数量级。这些结果是有意义的，因为它们质疑空位扩散作为B在Ge中扩散的机制的普遍共识。
The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(+/-0.3)x10-16 cm2/s and 5.5(+/-1.0)x1018/cm3, respectively at 850 degrees c by fitting experimentally obtained profiles. The value of diffusion coeffienc is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge.