Equipment for Low Temperature Steady-State Growth of Silicon from Metallic Solutions
Equipment for Low Temperature Steady-State Growth of Silicon from Metallic Solutions
复制标题
金属溶液中硅低温稳态生长设备
DOI：
10.1021/cg800120q
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发表时间：
2008
影响因子：
3.8
通讯作者：
R. Fornari
中科院分区：
文献类型：
--
作者：
T. Teubner;R. Heimburger;K. Böttcher;T. Boeck;R. Fornari
本文介绍了在Si（001）衬底上用铟作原料，采用自上而下的垂直叠层供料源、溶液和衬底的低温稳态溶液生长方法。介绍了专门为此任务设计的设备。通过应用不同的加热策略，坩埚壁中的垂直温差被调节以满足处理的三个阶段的要求，即Si溶解和均匀化、生长和溶质的再循环。从底部或侧面加热会产生适合生长的温差。然而，仅观察到侧面加热生长。为了理解这种效应，已经进行了传热和流体流动的数值模拟。从侧面加热启动流动路径，其允许进料源处的溶剂的有效饱和和基底处的显著过饱和。在这种情况下，具有{111}面的金字塔在Si（001）上的外延生长是...
Low temperature steady-state solution growth of silicon from indium on Si(001) substrates with a vertical stack of feeding source, solution, and substrate in top down position is demonstrated. The equipment especially designed for this task is presented. By applying different heating strategies the vertical temperature difference in the crucible wall is adjusted to meet the demands of the three stages of processing, that is, Si dissolution and homogenization, growth, and recycling of the solute. Heating from either the bottom or sides results in a temperature difference that should be suitable for growth. However, only for side heating growth has been observed. In order to understand this effect, numerical modeling of heat transfer and fluid flow has been performed. Heating from the side initiates a flow path, which allows both effective saturation of solvent at the feeding source and significant supersaturation at the substrate. In this case the epitaxial growth of pyramids with {111} facets on Si(001) s...