High-speed organic single-crystal transistors gated with short-channel air gaps: Efficient hole and electron injection in organic semiconductor crystals
High-speed organic single-crystal transistors gated with short-channel air gaps: Efficient hole and electron injection in organic semiconductor crystals
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DOI：
10.1016/j.orgel.2013.03.009
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发表时间：
2013-06
影响因子：
3.2
通讯作者：
Mayumi Uno;T. Uemura;Y. Kanaoka;Zhihua Chen;A. Facchetti;J. Takeya
中科院分区：
文献类型：
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作者：
Mayumi Uno;T. Uemura;Y. Kanaoka;Zhihua Chen;A. Facchetti;J. Takeya
短沟道、高迁移率有机场效应晶体管（OFFET）是基于短沟道气隙栅控单晶而开发的。红荧烯晶体的空穴迁移率为10 cm ~ 2/Vs，PDIF-CN_2晶体的电子迁移率为4cm ~ 2/Vs，沟道长度为6μm。这样的性能是由于这些器件中的低接触电阻，估计在红荧烯的栅极电压为−4V时低至0.5kΩ cm。在一种新的器件结构中，由于沟道长度为4.5μm，寄生电容较小，红荧烯气隙器件的截止频率估计高达25 MHz，漏极电压为-15 V，这是在环境条件下工作的p型OFFET的最快截止频率。
Short-channel, high-mobility organic filed-effect transistors (OFETs) are developed based on single crystals gated with short-channel air gaps. The high hole mobility of 10cm2/Vs for rubrene, and high electron mobility of 4cm2/Vs for PDIF-CN2crystals are demonstrated even with a short channel length of 6μm. Such performance is due to low contact resistance in these devices estimated to be as low as ∼0.5kΩ cm at gate voltage of −4V for rubrene. With the benefit of the short channel length of 4.5μm in a new device architecture with less parasitic capacitance, the cutoff frequency of the rubrene air–gap device was estimated to be as high as 25MHz for drain voltage of −15V, which is the fastest reported for p-type OFETs, operating in ambient conditions.