Preparation of Semiconducting Cubic Boron Nitride
Preparation of Semiconducting Cubic Boron Nitride
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DOI：
10.1063/1.1732816
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发表时间：
1962-04
影响因子：
4.4
通讯作者：
R. H. Wentorf
中科院分区：
文献类型：
--
作者：
R. H. Wentorf
立方氮化硼的半导体晶体可以在高压和高温下通过向合成混合物（六方氮化硼加上氮化锂或氮化镁）中加入少量选定的杂质来制备。P型晶体，蓝色，可以通过添加Be制备;它们的电阻率约为103 ohm-cm，导电激活能约为0.2 eV。N型晶体可以通过添加S、Si、KCN和其他杂质来制备;发现它们具有103 ohm-cm或更高的电阻率和0.05至0.20 V的导电活化能。在半导体立方氮化硼和金刚石晶体之间观察到点接触整流效应。
Semiconducting crystals of cubic BN may be prepared at high pressures and temperatures by adding small amounts of selected impurities to the synthesis mixture (hexagonal boron nitride plus lithium or magnesium nitride). P‐type crystals, blue in color, can be prepared by adding Be; they may have resistivities of about 103 ohm‐cm and activation energies for conduction of about 0.2 ev. N‐type crystals can be prepared by adding S, Si, KCN, and other impurities; they were found to have resistivities of 103 ohm‐cm or higher and activation energies for conduction of 0.05 to 0.20 v. The diffusion of impurities into cubic BN crystals was not found to proceed as rapidly as with diamond. Point‐contact rectification effects have been observed among semiconducting cubic BN and diamond crystals.