A High-Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering
A High-Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering
复制标题
用于纳米工程的高分辨率多功能聚焦离子注入平台
DOI：
10.1002/adem.202300889
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发表时间：
2023
影响因子：
3.6
通讯作者：
Adshead M
中科院分区：
文献类型：
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作者：
Adshead M
在纳米尺度上空间控制和修改材料特性的能力，包括在纳米尺度物体本身内，是发展先进纳米技术的基本要求。展示了为满足这一需求而设计的纳米级先进材料工程（P-NAME）平台的开发。P-NAME提供高分辨率聚焦离子束系统，具有同步扫描电子显微镜和单离子注入事件的二次电子检测。证明了P-NAME系统对各种离子种类的同位素质量分辨能力，提供了对纳米材料工程和纳米功能化至关重要的同位素注入的途径。使用二次离子质谱法（西姆斯）对注入到本征硅中的许多物质进行独立验证同位素质量选择的性能。模拟结果与动态离子注入模拟结果吻合较好，验证了该模拟方法的有效性。P-NAME的更广泛的性能能力，包括亚10 nm离子束成像分辨率和执行直写离子束掺杂和纳米级离子光刻的能力，也得到了证明。
The ability to spatially control and modify material properties on the nanoscale, including within nanoscale objects themselves, is a fundamental requirement for the development of advanced nanotechnologies. The development of a platform for nanoscale advanced materials engineering (P‐NAME) designed to meet this demand is demonstrated. P‐NAME delivers a high‐resolution focused ion beam system with a coincident scanning electron microscope and secondary electron detection of single‐ion implantation events. The isotopic mass‐resolution capability of the P‐NAME system for a wide range of ion species is demonstrated, offering access to the implantation of isotopes that are vital for nanomaterials engineering and nanofunctionalization. The performance of the isotopic mass selection is independently validated using secondary ion mass spectrometry (SIMS) for a number of species implanted into intrinsic silicon. The SIMS results are shown to be in good agreement with dynamic ion implantation simulations, demonstrating the validity of this simulation approach. The wider performance capabilities of P‐NAME, including sub‐10 nm ion beam imaging resolution and the ability to perform direct‐write ion beam doping and nanoscale ion lithography, are also demonstrated.